| 摘要 |
Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co<SUB>2-x-y</SUB>Mn<SUB>1+x</SUB>Al<SUB>1+y</SUB>, Co<SUB>2-x-y</SUB>Mn<SUB>1+x</SUB>Si<SUB>1+y</SUB>, Co<SUB>2-x-y</SUB>Mn<SUB>1+x</SUB>Ge<SUB>1+y</SUB>, and Co<SUB>2-x-y</SUB>Fe<SUB>1+x</SUB>Si<SUB>1+y</SUB>, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
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