| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which ensures a small change in resist pattern dimensions when the amount of light exposure varies (a large EL margin) and a resist pattern forming method. <P>SOLUTION: The positive resist composition includes a resin component (A) of which the solubility in an alkali developer increases by the action of an acid and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a resin (A1) having a maximum dissolution rate (R<SB>max</SB>) of ≥600 nm/s and a resin (A2) having a maximum dissolution rate (R<SB>max</SB>) of ≤100 nm/s, when a resist film is formed and immersed in an alkali developer for a predetermined time. <P>COPYRIGHT: (C)2009,JPO&INPIT |
