| 摘要 |
<p>A thin film transistor and a method for preparing the same are provided to lower an n-type conductivity of a semiconductor layer and to perform nitrogen doping easily. A method for preparing the thin film transistor comprises; forming a gate electrode(20) on a substrate(10); forming an insulating layer(30) on the gate electrode and the substrate; forming a semiconductor layer on the insulating layer by using a zinc oxide based material including Si; forming a source and drain electrode(50,60) connected to the semiconductor layer.</p> |
