发明名称 Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system
摘要 Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.
申请公布号 US7439068(B2) 申请公布日期 2008.10.21
申请号 US20040877391 申请日期 2004.06.25
申请人 SONY CORPORATION 发明人 TATSUMI TETSUYA
分类号 G01N33/00;H01L21/3065;G01N35/08;G03F7/42;H01L21/00;H01L21/027;H01L21/28;H01L21/311;H05H1/02 主分类号 G01N33/00
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