发明名称 High current density ion source
摘要 A high current density ion beam source includes a plasma source for generating plasma, a vacuum chamber coupled to the plasma source for extracting an ion beam from the plasma generated by the plasma source, a microwave field source configured to produce a microwave field that causes an ionization of gas within the plasma source, and a direct current voltage source configured to initiate an avalanche multiplication within the plasma source. The avalanche multiplication increases the ionization of gas in the plasma source and causes an increase in a current density of the ion beam.
申请公布号 US7439529(B2) 申请公布日期 2008.10.21
申请号 US20050056418 申请日期 2005.02.11
申请人 THE THAILAND RESEARCH FUND 发明人 TANTRAPORN WIROJANA;KITSUMPUN SURAWUT
分类号 H01J7/24;H01J27/16;H01J37/08;H01J49/10;H05B31/26;H05H1/54 主分类号 H01J7/24
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