| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a device for monitoring wafer polishing by which a change in the film thickness of a conductive film, after the film thickness reaching an extreme small thickness defined based on a skin depth, without being affected by slurry, and the like, is monitored to certainly detect the end point of polishing of the conductive film with high accuracy. <P>SOLUTION: A high-frequency transmission path 9 is formed at a portion that faces a conductive film 8 on the surface of a wafer W, and the polishing/removal state of the conductive film 8 is evaluated, from at least either of transmitted electromagnetic waves traveling through the high-frequency transmission path 9 and reflected electromagnetic waves that do not travel through the high-frequency transmission path 9 but that are reflected. Based on the detection, the end point of the polishing/removal process and the point, corresponding to the end point of the polishing/removal process, is detected. <P>COPYRIGHT: (C)2009,JPO&INPIT |
