MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To reduce further current density required for magnetization reversal. SOLUTION: A magnetoresistive element 10 includes a first free layer 15 in which a direction of magnetization changes by action of electrons with spin polarized; a second free layer 13 in which the direction of the magnetization changes by the action of the electrons with the spin polarized; a fixed layer 11 in which the direction of the magnetization is fixed; a first nonmagnetic layer 14 provided between the first free layer 15 and the second free layer 13; and a second nonmagnetic layer 12 provided between the second free layer 13 and the fixed layer 11. The relation between a product Ku1×V1 of a magnetic anisotropy constant Ku1 and activation volume V1 of the first free layer 15, and a product Ku2×V2 of a magnetic anisotropy constant Ku2 and activation volume V2 of the second free layer 13 satisfies Ku1×V1>Ku2×V2. COPYRIGHT: (C)2009,JPO&INPIT