| 摘要 |
A memory cell array in a semiconductor device includes a semiconductor substrate having active areas and isolation areas in parallel, a plurality of select lines having generally a U like shape and is configured to cross over the active areas and the isolation areas, and a plurality of word lines formed between the select lines. In view of the select line being formed in U like shape, an occurrence of a punch through phenomenon is prevented by a junction area formed between the select lines. As a result, a margin for reducing a width of the select line is increased.
|
