发明名称 PHOTOSENSOR, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To solve the following problem: an etching residue is generated in patterning a transparent electrode on a photodiode and the etching residue causes short-circuit between wirings or photodiodes, resulting in deterioration in yield or display defect, in a TFT array substrate to be provided on the phtotosensor used for an X ray imaging and displaying device, etc. SOLUTION: In this flat panel photosensor, a transparent electrode formed on a photodiode is formed of either IZO (indium zinc oxide), ITZO (indium tin zinc oxide) or ITSO (indium tin silicon oxide), and thus, the generation of etching residue can be suppressed and a photosensor having less defect can be formed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008251610(A) 申请公布日期 2008.10.16
申请号 JP20070087686 申请日期 2007.03.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAHORI MASAKI;HAYASHI MASAMI;UCHIDA YUSUKE;ISHIGA NOBUAKI
分类号 H01L27/146;H01L29/786;H01L31/09 主分类号 H01L27/146
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