| 摘要 |
<p>This invention provides an elastic surface wave apparatus, which is less likely to cause a variation in properties upon a temperature change, has a high reflection coefficient per electrode finger of IDT, and can easily narrow the band. In the elastic surface wave apparatus (1), a metal is filled into a plurality of grooves (2a) provided on the upper surface of a piezoelectric substrate (2) formed of quartz of which the Euler angle is 0° ± 5°, 0° to 140°, and 0° ± 40°, to form an IDT electrode (3). A piezoelectric film (4) formed of c axis-aligned ZnO is formed so as to cover the IDT electrode (3), and a Rayleigh wave is utilized as an elastic surface wave. The IDT electrode (3) is a metallic material composed mainly of at least one metal selected from the group consisting of Au, Ta, W, Pt, Cu, Ni, and Mo. When the wavelength of the elastic surface wave is ?, the metal as a main constituent in the IDT electrode (3), the standardized film thickness standardized by ? of the IDT electrode (3), and the standardized film thickness standardized by ? of the piezoelectric film fall within a range of individual combinations specified in Table 1 below.</p> |
