| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of introducing impurities into an active layer at a low and stable concentration in order to form a semiconductor element having little variation in threshold voltage. SOLUTION: In the semiconductor manufacturing apparatus having a cleaning unit used to clean the surface of a semiconductor film provided on an insulating substrate, an impurity introduction unit used to attach impurities to the surface of the semiconductor film, a laser crystallization unit used to crystallize the semiconductor film to which the impurities have been attached, and transfer robots used to connect the cleaning unit, the impurity introduction unit, and the laser crystallization unit, the amount of the impurities to be attached to the semiconductor film is controlled by the length of time of exposure in the impurity introduction unit and the semiconductor film is crystallized while a crystalline semiconductor film that contains the impurities at a low concentration is formed simultaneously by laser crystallization. COPYRIGHT: (C)2009,JPO&INPIT |
