| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus for improving process performance and apparatus performance by efficiently introducing a microwave and a gas into a treatment chamber, without causing abnormal electric discharges and generating a plasma having stable characteristics. <P>SOLUTION: A quartz plate 52 for introducing microwave, constituting a radial line slot antenna 55, is hermetically attached on a ceiling surface of a chamber 10. Microwaves, outputted from a microwave generator 60 propagates through a waveguide 62, a waveguide-coaxial pipe converter 64 and a coaxial pipe 66 and are introduced into the chamber 10 from the antenna 55. A treatment gas sent at a predetermined pressure from a treatment gas supply source 82 flows sequentially through gas flow passages of a first gas supply pipe 84, the coaxial pipe 66 and a nozzle portion 110, discharged from a discharge port 110a of the end of an injector unit 110, and then diffused into a plasma-generating space. Gaseous particles are ionized by microwave power that is radiated from a surface wave to propagate along the lower surface of the quartz plate 52, and surface-excited plasma is generated. <P>COPYRIGHT: (C)2009,JPO&INPIT |
