| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering method which inhibits plasma discharge from becoming unstable due to the replacement of a substrate, and prevents a film from degrading its quality due to the contamination of impurities into the film, when using a sputtering apparatus which copes with a mass production. <P>SOLUTION: The sputtering method includes: controlling a high-frequency power which is supplied to a target 63 from a high-frequency power source 69, so as to synchronize with changes of a component in the vicinity of a plasma discharge space, such as a rotational table 64 and a chimney-shaped deposition shield 67, and of a potential relationship; and eliminating an unstable factor of plasma. The sputtering method forms a film of high quality free from the contamination with the impurities. <P>COPYRIGHT: (C)2009,JPO&INPIT |
