发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of stable quality that prevents the short-circuiting of metal thin wires caused by the flowage of resin at the time of sealing, improves radiation property, and produces no thin burrs in the semiconductor device, where a part of a thermal conductor is exposed to the outside from a sealant resin and a method for manufacturing the same. <P>SOLUTION: The semiconductor device including the semiconductor 1, a thermal conductor 91 disposed facing a principal plane of the semiconductor 1, and the sealant resin that seals at least a part of the semiconductor device 1 and a part of the thermal conductor 91, with a plane facing the principal plane of the semiconductor device 1, in the thermal conductor 91 and a part of the plane on the opposite side exposed to the outside from the sealant resin 6, wherein an opening 11 that penetrates in the plate width direction is provided on a part of the plane, on which an exposed section of the thermal conductor 91 is provided; and a protrusion section 91b that protrudes to a side opposite to the side on which the semiconductor device 1 is disposed is provided at a circumference of the opening 11. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008252054(A) 申请公布日期 2008.10.16
申请号 JP20070147571 申请日期 2007.06.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTANI KATSUMI
分类号 H01L23/28;H01L21/56;H01L23/12;H01L23/29 主分类号 H01L23/28
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