Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System

摘要

In one embodiment of the present invention, a method of fabricating a memory device includes: providing a composite structure including a resistivity changing layer and a first conductive layer disposed on or above the resistivity changing layer, forming a second conductive layer on or above the first conductive layer, and patterning the second conductive layer such that at least a part of the patterned second conductive layer is usable as a via for contacting the first conductive layer.