| 摘要 |
A method of fabricating an isolation layer in a semiconductor device includes forming a trench in a semiconductor substrate, depositing a high-density plasma (HDP) oxide layer partially filling the trench by supplying an HDP deposition source, etching an overhang generated while the HDP oxide layer is deposited using a fluorine-containing etching gas, depositing a liner HDP oxide layer on the HDP oxide layer by supplying an inert gas and an HDP deposition source such that fluorine (F) is trapped in the liner HDP oxide layer, performing an isotropic etching on an overhang portion of a side surface of the HDP oxide layer using the fluorine (F) trapped in the liner HDP oxide layer, and forming an HDP capping layer on the liner HDP oxide layer to fill a remaining portion of the trench.
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