发明名称 |
Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity |
摘要 |
Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification/consumption during the subsequent ashing step during which the polymeric film is removed.
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申请公布号 |
US7435676(B2) |
申请公布日期 |
2008.10.14 |
申请号 |
US20060328981 |
申请日期 |
2006.01.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DALTON TIMOTHY J.;FULLER NICHOLAS C.;NITTA SATYANARAYANA V. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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