MANUFACTURING METHOD OF COPPER METALIZATION FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a copper line of a semiconductor device is provided to eliminate a silicon nitride layer deposition process and a RIE process by using titanium/titanium nitride instead of a silicon nitride layer. A via contact hole and a trench are formed in an interlayer dielectric. A copper material is buried into the interlayer dielectric. A CMP process for a semiconductor substrate including a copper layer is performed to remove the copper layer except for a metal line part and a barrier metal(S6). A deposition process is performed to deposit titanium/titanium nitride on the semiconductor substrate(S7). A RIE(Reactive Ion Etch) process is performed to etch a part except for a via contact hole and a trench of the deposited titanium/titanium nitride(S8).