| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film wherein crystal grains of large diameter are formed over a wide area. SOLUTION: An amorphous silicon 10 is scan-irradiated with a beam pattern 11 including a plurality of recessed patterns 11a in a first scanning direction 12 (a first crystallization process). Then the amorphous silicon is scan-irradiated with a beam pattern 16 in a second scanning direction 15 different from the first scanning direction 12 by 90°(a second crystallization process). As a result, with a band-shaped crystal grain 13 formed in the first crystallization process as a seed, the diameter of crystal grain is expanded in the second scanning direction 15. That is, a new band-shaped crystal grain 17 whose grain diameter is expanded, is obtained. COPYRIGHT: (C)2009,JPO&INPIT |
