MECHANISM FOR FORMING A REMOTE DELTA DOPING LAYER OF A QUANTUM WELL STRUCTURE
摘要
A method of fabricating a quantum well device includes forming a diffusion barrier on sides of a delta layer of a quantum well to confine dopants to the quantum well.
申请公布号
WO2008121714(A1)
申请公布日期
2008.10.09
申请号
WO2008US58446
申请日期
2008.03.27
申请人
INTEL CORPORATION;JIN, BEEN;MAJUMDAR, AMLAN;KAVALIEROS, JACK;DATTA, SUMAN;CHAU, ROBERT
发明人
JIN, BEEN;MAJUMDAR, AMLAN;KAVALIEROS, JACK;DATTA, SUMAN;CHAU, ROBERT