High volt complementary metal oxide semiconductor transistor, has trenches extending in drift region parallel to shortest connection between source and drain and filled with electrically conductive material and insulated against body

摘要

The transistor has a semiconductor body for forming source (S) and drain (D) of a conductivity type. A channel region (KG) of another conductivity type is arranged below a gate. A drift region (DG) of the former type extends between the channel region and the drain. A set of trenches is spaced parallel from each other and serves as vertical field plates. The trenches extend in the drift region parallel to the shortest connection between the source and the drain, and are filled with an electrically conductive material and insulated against the body with an insulation layer lining the trenches. The trenches are filled with polycrystalline silicon or silicon.