| 摘要 |
<p>A non-volatile memory device having a charge trap layer and a method for manufacturing the same are provided to prevent degradation of an electric characteristic such as a threshold voltage by preventing an electric field from being concentrated to a weak position. A non-volatile memory device includes a device isolation layer(230), a tunneling layer(240), a charge trap layer(250), a charge blocking layer(260) and a control gate electrode(270). The device isolation layer has an insulation layer(231) filled in a trench of a substrate to have a predetermined thickness, an insulation layer spacer(233) formed in a trench sidewall of the insulation layer, and a buffer layer formed on the insulation layer in the trench. The tunneling layer is disposed on an active region defined by the device isolation layer. The charge trap layer is disposed on the tunneling layer. The charge blocking layer is disposed on the charge trap layer. The control gate electrode is disposed on the charge blocking layer.</p> |
