| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the generation of corrosion of a wiring layer containing copper and preventing the deterioration of the wiring layer due to reaction of copper composing the wiring layer with polyimide precursor without installing an expensive manufacturing apparatus. <P>SOLUTION: In the method having a step of forming a wiring layer 6 containing at least copper and a step of forming a polyimide layer 7 on the surface of the wiring layer 6, the step of forming the polyimide layer 7 polymerizes the polyimide layer 7 in inert gas. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
