| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile memory device capable of solving the inhibition of miniaturization of an element and complexity of a manufacturing process thereof, of additionally writing data at a time besides the manufacturing time, and of preventing forgery caused by rewriting of data, and to provide a semiconductor device having the same. SOLUTION: A memory element is manufactured by arranging a first conductive layer on an insulating film, a second conductive layer on a position adjacent to the position of the first conductive layer, and conductive fine particles each surface of which is covered with an organic film, and thus arranging the conductive fine particles between the first conductive layer and the second conductive layer. COPYRIGHT: (C)2009,JPO&INPIT |
