| 摘要 |
The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): <?in-line-formulae description="In-line Formulae" end="lead"?>Y=Y<SUB>0</SUB>+A.e<SUP>-(x</SUP><SUP><SUB2>1</SUB2></SUP><SUP>-1)/T</SUP><SUP><SUB2>1</SUB2></SUP>+B.(1-e<SUP>-x</SUP><SUP><SUB2>2</SUB2></SUP><SUP>/T</SUP><SUP><SUB2>2</SUB2></SUP>) (I)<?in-line-formulae description="In-line Formulae" end="tail"?> wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x<SUB>1 </SUB>is the thickness (mum) of a gallium nitride layer, x<SUB>2 </SUB>is the thickness (mm) of a sapphire substrate, Y<SUB>0 </SUB>is -107±2.5, A is 24.13±0.50, B is 141±4.5, T<SUB>1 </SUB>is 0.56±0.04, and T<SUB>2 </SUB>is 0.265±0.5.
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