SEMICONDUCTOR DEVICE INCLUDING AN AMORPHOUS NITRIDED SILICON ADHESION LAYER AND METHOD OF MANUFACTURE THEREFOR

摘要

Provided is a method for manufacturing a semiconductor device (100). The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer (120) over a substrate (110), and forming a second semiconductor layer (140) over the first semiconductor layer, wherein an amorphous nitrided silicon adhesion layer (130) is located between and adheres the first and second semiconductor layers.