发明名称 Semiconductor memory device including post package repair control circuit and post package repair method
摘要 Provided are a semiconductor memory device having a post package repair control circuit and a post package repair method. In the semiconductor memory device and the post package repair method, in a post package repair mode, a second memory bank is used as a fail bit map memory for storing failed bit information regarding a first memory bank, and the first memory bank is used as a fail bit map memory for storing failed bit information regarding the second memory bank.
申请公布号 US2008247243(A1) 申请公布日期 2008.10.09
申请号 US20080080728 申请日期 2008.04.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG JAE-SUNG;KWAK BYUNG-HEON;JANG HYUN-SOON;SEO SEUNG-WHAN;RYU SANG-JOON;LIM HYUN-TAE
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
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