发明名称 MICROWAVE PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a microwave plasma treatment device where flat plasma with a uniform shape can be formed, and the observation in the surface of a substrate is facilitated. <P>SOLUTION: The microwave plasma treatment device comprises: a vacuum chamber (2) formed of an electrically conductive material; an antenna (4) fixed to the upper wall face inside the vacuum chamber (2), having a through hole (3) and formed of an electrically conductive material; and a stage (5) arranged so as to be confronted with the antenna (4) and capable of being mounted with a substrate (S). One end of the through hole (3) is connected to the outside of the vacuum chamber (2), the other end of the through hole (3) is located in the face confronted with the stage (5) in the antenna (4), a gaseous starting material for plasma is fed to a gap between the antenna (4) and the stage (5) through the through hole (3), microwaves are fed from the outside of the vacuum chamber (2), so as to generate plasma in a gap between the antenna (4) and the stage (5), and the surface of the substrate (S) mounted on the stage (5) can be observed through the through hole 3. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008240010(A) 申请公布日期 2008.10.09
申请号 JP20070078205 申请日期 2007.03.26
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 YAMADA HIDEAKI;CHAYAHARA AKIYOSHI;MOKUNO YOSHIAKI;SHIKADA SHINICHI
分类号 C23C16/511;C23C16/27;H01L21/205;H05H1/46 主分类号 C23C16/511
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