| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method in which ion-implantation process of forming extension regions of a trench-type transistor and a high breakdown voltage transistor is performed during the same photolithographic process. SOLUTION: A trench is formed in a trench type cell transistor region, then a gate insulating film and a gate material layer are formed on a semiconductor substrate; a photoresist layer is formed on the semiconductor substrate, wherein the trench-type cell transistor region and an extension region forming portion of a high breakdown voltage transistor region are exposed; and ions are implanted to the surface of the semiconductor substrate of the trench-type cell transistor region and the high breakdown voltage transistor region to form the extension regions of each region, after which a gate is patterned. After that, the trench-type cell transistor region and the high breakdown voltage transistor region are covered with photoresist layers, then the ions are implanted into a normal breakdown voltage transistor region and an extension region of its region is formed. COPYRIGHT: (C)2009,JPO&INPIT |
