METHOD FOR REFORMING THIN FILM

摘要

PROBLEM TO BE SOLVED: To reform a thin film by a process at a temperature lower than 400°C. SOLUTION: The thin film for a substrate which has passed through a CVD process is reformed by utilizing surface heating by the ultraviolet light absorption of the thin film on the substrate by an annealing treatment furnace 2. Partial heating by the absorption of ultraviolet light at a defective site of the thin film is utilized. A pulse laser or a continuous wave laser is used as a light source 6 irradiating the ultraviolet light. The thin film may also be supplied with irradiating light from the light source emitting light in a visible-light region except an ultraviolet wavelength region when reforming the thin film. The light source 6 irradiating the ultraviolet light irradiates light having a wavelength longer than 210 nm. The thin film is reformed by utilizing the surface heating by the ultraviolet light absorption of the thin film in an atmosphere separately supplied with an oxidizing gas from a bomb 3, a reducing gas from a bomb 4 and an inert gas from a bomb 5. An ozone gas is supplied as an oxidizing gas. A dilution hydrogen gas is supplied as the reducing gas. COPYRIGHT: (C)2009,JPO&INPIT