SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit having a layout capable of achieving the stabilization of gate protective characteristics and an improvement in the degree of integration of the integrated circuit without using a Zener diode having a plurality of breakdown voltages corresponding to the gate breakdown voltage of a transistor. SOLUTION: The semiconductor integrated circuit has a high breakdown voltage output circuit having a push-pull circuit consisting of a high-side transistor and a low-side transistor, a level shift circuit and a gate protective circuit. The gate protective circuit has a voltage-dividing resistor dividing the breakdown voltage by the Zener diode and the Zener diode consisting of a P-type impurity region doped by P-type impurities. The voltage-dividing resistor is arranged so as to be surrounded by an N-type impurity region doped by N-type impurities. COPYRIGHT: (C)2009,JPO&INPIT