| 摘要 |
PROBLEM TO BE SOLVED: To secure stable operation of a semiconductor device by also improving reliability to a hot carrier without increasing on-resistance and without turning on a parasitic NPN transistor. SOLUTION: The semiconductor device is provided with second conduction-type layers 2, 11, and 16 selectively provided on a semiconductor substrate 1 while their each impurity concentration is changed, a first conduction-type source region 3 provided on/above the second conduction-type layers, a first conduction-type drain region 4 provided on the second conduction-type layer apart from the source region 3, a gate electrode 6 provided between the first conduction-type source region 3 and the drain region 4 via an insulating film 5, and a second conduction-type contact layer 7 provided adjacently to the source region 3. A region 13 in the second conduction-type layer on the source region side has a higher impurity concentration than that of a region 14 in the second conduction-type layer on the drain region 4 side. COPYRIGHT: (C)2009,JPO&INPIT
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