| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing SOI (semiconductor on insulator) semiconductor integrated circuit having a uniform characteristic and quality though having a variation in the thicknesses of SOI layers of delivered SOI substrates. SOLUTION: The semiconductor integrated circuit manufacturing method creates an SOI layer thickness data base corresponding to actually measured data of thicknesses of SOI layers with respect to each identification data of the SOI substrates to extract the actually measured data of each SOI substrates from the SOI layer thickness data base and performs layer thickness regulating surface treatment for each SOI substrates on the basis of the extraction. The semiconductor integrated circuit manufacturing device comprises an SOI layer thickness data base memory unit for storing the SOI layer thickness data base, a layer thickness regulating condition control unit for extracting the actually measured data for each SOI substrates from the SOI layer thickness data base to set the condition of the layer thickness regulating surface treatment on the basis of the extraction, and a surface treating unit for applying surface treatment on the SOI layer according to the condition to regulate the layer thickness of the SOI layer. COPYRIGHT: (C)2009,JPO&INPIT
|
