OXIDE-CONTAINING FILM FORMED FROM SILICON

摘要

A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 25O0C and HOO0C with admission into the process chamber of diatomic reductant source gas Z-Z' where Z and Z' are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed <110> and <100> planes and a film residual stress associated with the film being formed at a temperature of less than 6000C and having a <110> film thickness that exceeds a <100> film thickness on the <100> crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.