发明名称 |
Akustische Oberflächenwellenanordnung und Verfahren zu deren Herstellung |
摘要 |
A surface acoustic wave device is provided having superior electrical power resistance that is obtained by improving stress migration resistance of electrodes. In order to form at least one electrode (3), for example, on aθrotation Y-cut (θ= 36 DEG to 42 DEG ) LiTaO3 piezoelectric substrate (2), an underlying electrode layer (5) containing Ti or Cr as a primary component is formed, and on this layer described above, an Al electrode layer (4) containing Al as a primary component is then formed. The Al electrode layer (4) is an oriented film grown by epitaxial growth and is also a polycrystalline thin film having a twin structure in which a diffraction pattern observed in an X-ray diffraction pole figure has a plurality of symmetry centers. <IMAGE> |
申请公布号 |
DE60228396(D1) |
申请公布日期 |
2008.10.02 |
申请号 |
DE2002628396 |
申请日期 |
2002.12.27 |
申请人 |
MURATA MANUFACTURING CO. LTD. |
发明人 |
NAKAGAWARA, OSAMU;SAEKI, MASAHIKO;INOUE, KAZUHIRO |
分类号 |
H03H9/02;H03H3/08 |
主分类号 |
H03H9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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