| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor device for improving element characteristic and stability of an organic transistor, and to provide a manufacturing process of the same. SOLUTION: The organic semiconductor device includes a source electrode, a drain electrode, a gate electrode, an organic semiconductor layer, and a gate insulating layer. The manufacturing process of this organic semiconductor device includes an element structure forming step of forming, on a substrate, an organic thin-film transistor including the source electrode, drain electrode, gate electrode, organic semiconductor layer, and gate insulating layer; and a voltage applying step of applying, to the gate electrode, a relatively positive gate voltage, to at least one of the drain electrode and source electrode when the organic thin-film transistor is a P-type transistor and to apply to the gate electrode, a relatively negative gate voltage to at least one of the drain electrode or source element, when the organic thin-film transistor is a N-type transistor. COPYRIGHT: (C)2009,JPO&INPIT
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