| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing method by which friction between a film to be polished and a polishing pad is sufficiently small to reduce defects on the surface after polishing, the film to be polished can be polished at a high polishing speed and moreover, the impact of waste liquid to environment is small. <P>SOLUTION: The method is used to chemically and mechanically polish a film to be polished by bringing it into contact with a polishing pad (12) for rubbing, while supplying a first chemical (18) and a second chemical (21) onto the polishing pad (12). The first chemical contains an electrolyte and air bubbles of 10 nm-1,000μm in diameter, and the second chemical contains abrasive particles. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
