| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-priced/stable display element by simplifying the formation process of a thin film transistor using an oxide semiconductor and a method for forming the same. SOLUTION: The method for forming a thin film transistor where a gate electrode 4 is formed on a substrate 1 that includes a step that forms the electrode 4, a step that forms a metal oxide layer 7 so as to cover the electrode 4, a step that forms a source electrode 6 and a drain electrode 5, and a step that converts a part of the layer 7 into a channel region by performing thermal processing on a region that is to be a channel region of the layer 7 in an inert gas. COPYRIGHT: (C)2009,JPO&INPIT
|
