| 摘要 |
This disclosure concerns a semiconductor device comprising: a bulk substrate; an insulation layer provided on the bulk substrate; a semiconductor layer containing an active area on which a semiconductor element is formed, and a dummy active area isolated from the active area and not formed with a semiconductor element thereon, the semiconductor layer being provided on the insulation layer; and a supporting unit provided beneath the dummy active area to reach the bulk substrate piercing through the insulation layer, the supporting unit supporting the dummy active area.
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