| 摘要 |
<p>A diode structure (20) having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode (21) and cathode (30) of the device are located on the same side of the bottom semiconductor layer (35), providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa (22), and the sides of the mesa are covered with a nonconductive spacer (24) extending from the anode to the bottom layer. An ohmic contact (33), preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide.</p> |
