| 摘要 |
An apparatus and a method for treating a substrate using plasma are provided to control a processing shape precisely by reducing an ion energy width. An apparatus for treating a substrate using plasma includes a chamber(21), an RF(Radio Frequency) electrode(22), an opposite electrode(23), an RF voltage applying unit(27), and a pulse voltage applying unit(29). The RF electrode is arranged in the chamber, and supports a substrate to be processed on a main plane. The opposite electrode is arranged to be opposite to the RF electrode. The RF voltage applying unit applies an RF voltage of a predetermined frequency for the RF electrode. The pulse voltage applying unit applies a predetermined pulse voltage to be overlapped with the RF voltage for the RF electrode. The pulse voltage applying unit adjusts the applying timing of the pulse voltage, and has a control unit for setting a pause time when the pulse voltage is not applied.
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