发明名称 |
Halogen-free amorphous carbon mask etch having high selectivity to photoresist |
摘要 |
In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O 2 ), nitrogen (N 2 ), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O 2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.
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申请公布号 |
EP1973148(A2) |
申请公布日期 |
2008.09.24 |
申请号 |
EP20080153089 |
申请日期 |
2008.03.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, JONG MUN;WANG, JUDY;JOSHI, AJEY M.;LIU, JINGBAO;PU, BRYAN Y. |
分类号 |
H01L21/027;H01L21/311 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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