METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce a DC(Direct Current) fail and an easy fail by reducing the defect generation at a wafer edge part. An etch stop layer(23) and a sacrificial dielectric(24) are formed on a wafer(20). A photoresist pattern is formed on the sacrificial dielectric. The photoresist pattern has an opening for exposing a predetermined part of the sacrificial dielectric and completely covers a wafer edge part. The sacrificial dielectric and the etch stop layer are etched by using the photoresist pattern as a mask to form a storage node hole(27). Particles generated in processes are removed. The photoresist pattern is removed. A storage node for a capacitor is formed on an inner surface of the storage node hole. The sacrificial dielectric is formed with an oxide layer. The etch stop layer is formed with a nitride layer. A thickness of the sacrificial layer is 10000 to 20000 Å. Before the photoresist pattern is formed, one of a hard mask layer, a diffused reflection layer, and a laminated layer thereof is formed.