发明名称 Method for producing devices having piezoelectric films
摘要 A method for achieving improved piezoelectric films for use in a resonator device is disclosed. The method is based on applicant's recognition that the texture of a piezoelectric film (e.g., as used in a piezoelectric resonator) is directly affected by the surface morphology of the underlying electrode, and additionally, the surface morphology of the electrode is affected by the surface morphology of the underlying oxide layer or Bragg stack. Accordingly, the invention comprises a method of making a device having a piezoelectric film and electrode comprising controlling the deposition and surface roughness of the electrode and optionally, the Bragg stack. <IMAGE>
申请公布号 KR100859674(B1) 申请公布日期 2008.09.23
申请号 KR20010006759 申请日期 2001.02.12
申请人 发明人
分类号 H01L41/08;H01L41/22;H01L21/203;H01L41/09;H01L41/18;H03H3/02;H03H9/17 主分类号 H01L41/08
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