| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving its reliability in durability while avoiding complication of manufacturing processes, complication of a structure and cost increase. SOLUTION: The semiconductor device has: a semiconductor substrate 13(12) formed on any one of p- and n-types; a wiring pattern 17 of the other side of the p- and n-types formed on a front surface region of the semiconductor substrate 13; an insulating layer 20 laminated and formed on the front surface of the semiconductor substrate 13 so as to cover the wiring pattern 17; a contact hole 21 formed so as to pierce through the insulating layer portion on the upper side of the end position of the wiring pattern 17; and conductor patterns 18, 19 formed on the insulating layer 20 by connecting their one ends to the end of the wiring pattern 17 via the contact hole 21. A dummy pattern 25 electrically connected to the wiring pattern 17 is oppositely to the conductive patterns 18, 19 on the front surface side region of the semiconductor substrate 13 on the lower part side of the conductive patterns 18, 19. COPYRIGHT: (C)2008,JPO&INPIT
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