发明名称 |
Heterojunction bipolar transistor |
摘要 |
2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.
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申请公布号 |
US4979009(A) |
申请公布日期 |
1990.12.18 |
申请号 |
US19890415708 |
申请日期 |
1989.09.29 |
申请人 |
HITACHI, LTD. |
发明人 |
KUSANO, CHUSHIRO;TANOUE, TOMONORI;MITANI, KATSUHIKO |
分类号 |
H01L29/73;H01L21/331;H01L29/205;H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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