| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor with a protruberant extrinsic self-aligned base that uses a selective epitaxial growth for BICMOS integration, and to provide a high-performance BiCMOS structure with minimum process complexity, without having to sacrifice the performances of either the bipolar transistors or CMOS devices. SOLUTION: A high-performance bipolar transistor with a raised extrinsic self-aligned base is integrated into a BiCMOS structure including CMOS devices. By forming pad layers and raising the height of an intrinsic base layer relative to the source and drain of preexisting CMOS devices and by forming an extrinsic base through selective epitaxy, the effect of surface variations is minimized during a lithographic patterning of the extrinsic base. Also, by not employing chemical mechanical planarization process during the fabrication of the bipolar structures, the complexity of process integration is reduced. Internal spacers or external spacers may be formed for isolating the base from the emitter. The pad layers, the intrinsic base layer, and the extrinsic base layer form a mesa structure that coincide with the outer sidewall surfaces. COPYRIGHT: (C)2008,JPO&INPIT
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