发明名称 |
PHOTOMASK, PHOTOMASK SUPERIMPOSITION CORRECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
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申请公布号 |
US2008225254(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080047516 |
申请日期 |
2008.03.13 |
申请人 |
KOMINE NOBUHIRO;ISHIGO KAZUTAKA;SASAKI NORIAKI;HATANO MASAYUKI |
发明人 |
KOMINE NOBUHIRO;ISHIGO KAZUTAKA;SASAKI NORIAKI;HATANO MASAYUKI |
分类号 |
G03B27/42;G03F1/36;G03F1/42;G03F7/20;H01L21/027 |
主分类号 |
G03B27/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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