| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor single crystal by an MCZ method (magnetic field applied Czochralski method), by which the oxygen concentration in the crystal growth axis direction of a pulled semiconductor single crystal can be controlled to a desired value with a higher precision. SOLUTION: In the method for manufacturing the semiconductor single crystal by the MCZ method, comprising pulling a semiconductor single crystal while applying a magnetic field to a raw material melt accommodated in a crucible by a magnetic field application device, in a pulling furnace of the semiconductor single crystal, the relation between the magnetic field center relative position, that is the relative position of the center of the magnetic field by the magnetic field application device to the surface of the raw material melt, and the oxygen concentration in a pulled semiconductor single crystal is previously searched, and the semiconductor single crystal is pulled while controlling the magnetic field center relative position on the basis of the relation between the magnetic field center relative position and the oxygen concentration so that the oxygen concentration in the axis direction of the semiconductor single crystal being pulled becomes a desired value. COPYRIGHT: (C)2008,JPO&INPIT
|
