| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which can prevent occurrence of a higher mode causing kink. SOLUTION: The semiconductor laser having a ridge type or buried ridge type refractive index waveguide structure comprises an n-GaAs substrate 12, an n-AlGaAs lower clad layer 10a arranged on the n-GaAs substrate 12 and having a refractive index increasing as it recedes from the substrate, an active layer 7a arranged on the lower clad layer 10a, and a p-AlGaAs upper clad layer 4a with a ridge shaped upper portion arranged on the active layer 7a and having a refractive index decreasing as it recedes from the active layer. Forbidden band width of the lower clad layer 10a and the upper clad layer 4a is set larger than that of the active layer 7a, and refractive index distribution of the lower clad layer 10a and the upper clad layer 4a is made asymmetric such that the light intensity distribution is shifted to the substrate side from the active layer as the center in the height direction of the n-GaAs substrate 12. COPYRIGHT: (C)2008,JPO&INPIT
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